標題: | Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices |
作者: | Tsai, Yu-Ting Chang, Ting-Chang Lin, Chao-Cheng Chen, Shih-Cheng Chen, Chi-Wen Sze, Simon M. Yeh (Hung), Fon-Shan Tseng, Tseung-Yuen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2011 |
摘要: | The resistive random access memory has attracted much attention for nonvolatile memory application in recent years. However, there is an issue about variations of switching parameters such as set voltage and conductivity of resistance state in resistive switching memory. The variations may cause not only switching error but also reading error during operation. We investigated the switching performance of binary metal oxide as a resistive switching layer embedded with and without metal nanocrystals. Compared with the conventional memory structure, the memory embedded with metal nanocrystals shows better stability, preferable uniformity for the next generation nonvolatile memory application. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3531843] All rights reserved. |
URI: | http://hdl.handle.net/11536/26088 http://dx.doi.org/10.1149/1.3531843 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.3531843 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 14 |
Issue: | 3 |
起始頁: | H135 |
結束頁: | H138 |
顯示於類別: | 期刊論文 |