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dc.contributor.authorTsai, Yu-Tingen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorChen, Shih-Chengen_US
dc.contributor.authorChen, Chi-Wenen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorYeh (Hung), Fon-Shanen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:38:00Z-
dc.date.available2014-12-08T15:38:00Z-
dc.date.issued2011en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/26088-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3531843en_US
dc.description.abstractThe resistive random access memory has attracted much attention for nonvolatile memory application in recent years. However, there is an issue about variations of switching parameters such as set voltage and conductivity of resistance state in resistive switching memory. The variations may cause not only switching error but also reading error during operation. We investigated the switching performance of binary metal oxide as a resistive switching layer embedded with and without metal nanocrystals. Compared with the conventional memory structure, the memory embedded with metal nanocrystals shows better stability, preferable uniformity for the next generation nonvolatile memory application. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3531843] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleInfluence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3531843en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume14en_US
dc.citation.issue3en_US
dc.citation.spageH135en_US
dc.citation.epageH138en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000285974100019-
dc.citation.woscount31-
Appears in Collections:Articles