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dc.contributor.authorOu, Po-Chien_US
dc.contributor.authorLiu, Wei-Reinen_US
dc.contributor.authorTon, Ho-Jeien_US
dc.contributor.authorLin, Ja-Honen_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2014-12-08T15:38:00Z-
dc.date.available2014-12-08T15:38:00Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3525993en_US
dc.identifier.urihttp://hdl.handle.net/11536/26090-
dc.description.abstractWe observed ultrafast free exciton thermalization time of 700-900 fs and obtained the magnitude of maximal differential absorption to be 1.8 x 10(4) cm(-1) with the pumping fluence of 10 mu J/cm(2) by measuring transient differential transmission in a thin ZnO epitaxial layer at room temperature. The largest induced transparency occurs near exciton resonance associated with absorption saturation by comparing the excitation from the above band-gap to band-tail states. The pumping dependent transient absorption reveals transition of excitonic relaxation from exciton-phonon scattering to exciton-exciton scattering or to an electron-hole plasma. (C) 2011 American Institute of Physics. [doi:10.1063/1.3525993]en_US
dc.language.isoen_USen_US
dc.titleUltrafast relaxation and absorption saturation at near exciton resonance in a thin ZnO epilayeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3525993en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume109en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000286219300003-
dc.citation.woscount7-
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