標題: | Influence of phonon-associated tunneling rate on transport through a single-molecule transistor |
作者: | Tang, Ying-Tsan Chuu, Der-San Lin, Kao-Chin 電子物理學系 Department of Electrophysics |
關鍵字: | Phonon assisted tunneling;Electron-phonon interactions;Electronic transport |
公開日期: | 1-一月-2011 |
摘要: | We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate We find that the electron-phonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n = 0) and the first phonon sideband (n = 1) These anomalies are consistent with the experimental observations in transport experiments (C) 2010 Elsevier Ltd All rights reserved |
URI: | http://dx.doi.org/10.1016/j.ssc.2010.10.007 http://hdl.handle.net/11536/26122 |
ISSN: | 0038-1098 |
DOI: | 10.1016/j.ssc.2010.10.007 |
期刊: | SOLID STATE COMMUNICATIONS |
Volume: | 151 |
Issue: | 1 |
起始頁: | 87 |
結束頁: | 92 |
顯示於類別: | 期刊論文 |