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dc.contributor.authorLIN, HCen_US
dc.contributor.authorLIN, HYen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorWANG, PJen_US
dc.contributor.authorDENG, RCen_US
dc.contributor.authorLIN, JDen_US
dc.date.accessioned2014-12-08T15:04:07Z-
dc.date.available2014-12-08T15:04:07Z-
dc.date.issued1994-02-07en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.111005en_US
dc.identifier.urihttp://hdl.handle.net/11536/2616-
dc.description.abstractWe report on the deposition of in situ boron-doped polycrystalline Si films on the SiO2 surface with reduced growth pressures at 550 degrees C. The deposition rate of these films decreased as the doping level was greater than 10(19) cm(-3). Such a result is in sharp contrast to what has been observed previously for similar films grown with conventional low pressure chemical vapor deposition techniques. It was also found that the incubation time prior to the deposition of these films diminished as the doping level was increased to 3x10(20) cm(-3) or higher. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of growth, which facilitates the nucleation of Si.en_US
dc.language.isoen_USen_US
dc.titleDEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURESen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.111005en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume64en_US
dc.citation.issue6en_US
dc.citation.spage763en_US
dc.citation.epage765en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994MV50100032-
dc.citation.woscount4-
Appears in Collections:Articles