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dc.contributor.authorChen, Hou-Yuen_US
dc.contributor.authorLin, Chia-Yien_US
dc.contributor.authorChen, Min-Chengen_US
dc.contributor.authorHuang, Chien-Chaoen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2014-12-08T15:38:10Z-
dc.date.available2014-12-08T15:38:10Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/26187-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3601849en_US
dc.description.abstractThe formation of a uniform, high tensile stress and low silicide/Si interfacial resistance nickel silicide in nMOSFET by introducing pulsed laser annealing (PLA) is reported. This annealing approach facilitated the phase transformation of nickel silicide to Si-rich NiSi(x) compounds using a low-thermal-budget process, improves the silicide/Si interface regularity and avoids familiar (111) NiSi(2) facet formation at a laser energy of 1.5 J cm(-2). By increasing laser energy density up to 2.3 J cm(-2), the device performance and statistics junction leakage distribution were degraded due to the increased sheet resistance of silicide layer and the destroyed silicide/Si interface morphology. When the PLA with a laser energy density of 1.5 J cm(-2) was employed for nickel silicidation on the p-type Schottky diodes, a 0.16 eV hole Schottky barrier height (SBH) increase from 0.52 to 0.68 eV was observed. In addition, the application of PLA for source/drain silicidation of nMOSFETs demonstrated an 8% enhancement in I(on) I(off) characteristic relative to that obtained through the conventional two-step rapid thermal annealing (RTA). This PLA method holds promise as a potential replacement for current nickel silicide annealing approaches toward extremely scaled-down transistors. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3601849] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleNickel Silicide Formation using Pulsed Laser Annealing for nMOSFET Performance Improvementen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3601849en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue8en_US
dc.citation.spageH840en_US
dc.citation.epageH845en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000292154300087-
dc.citation.woscount3-
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