NEW OBSERVATION OF CHARGE INJECTION IN MOS ANALOG SWITCHES

Full metadata record

DC Field	Value	Language
dc.contributor.author	CHEN, MJ	en_US
dc.contributor.author	GU, YB	en_US
dc.contributor.author	WU, T	en_US
dc.contributor.author	HSU, PC	en_US
dc.contributor.author	LIU, TH	en_US
dc.date.accessioned	2014-12-08T15:04:07Z	-
dc.date.available	2014-12-08T15:04:07Z	-
dc.date.issued	1994-02-03	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:19940177	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2618	-
dc.description.abstract	Based on experimental analogue MOS switches, the Letter reports a new observation of the charge injection component due to channel charges in weak inversion. As identified by the mixed-mode circuit and device simulations, this new component can contribute comparably to the switch-induced error voltage on a switched capacitor.	en_US
dc.language.iso	en_US	en_US
dc.subject	INTEGRATED CIRCUITS	en_US
dc.subject	SWITCHED CAPACITOR NETWORKS	en_US
dc.title	NEW OBSERVATION OF CHARGE INJECTION IN MOS ANALOG SWITCHES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:19940177	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	3	en_US
dc.citation.spage	213	en_US
dc.citation.epage	214	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994MX97100030	-
dc.citation.woscount	2	-
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.