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dc.contributor.authorChen, C. W.en_US
dc.contributor.authorTseng, C. H.en_US
dc.contributor.authorHsu, C. Y.en_US
dc.contributor.authorChou, C. P.en_US
dc.contributor.authorHou, K. H.en_US
dc.date.accessioned2014-12-08T15:38:15Z-
dc.date.available2014-12-08T15:38:15Z-
dc.date.issued2010-12-20en_US
dc.identifier.issn0217-9849en_US
dc.identifier.urihttp://dx.doi.org/10.1142/S0217984910025097en_US
dc.identifier.urihttp://hdl.handle.net/11536/26209-
dc.description.abstractAl(2)O(3)-doped zinc oxide (in AZO, the Al(2)O(3) contents are approximately 2 wt.%) films have been grown by radio frequency (RF) magnetron sputtering at room temperature under varied sputtering pressures ranging from 3.5-15 mTorr. The electrical resistivity of AZO films is about 2.22 x 10(-3) Omega cm (sheet resistance similar to 89 Omega/square for a thickness similar to 250 nm), and the visible range transmittance is a bout 80% at the argon sputtering pressure of 15 mTorr and a RF power of 100 W. This study analyzes the structural, morphological, electrical and optical properties of AZO thin films grown on soda-lime glass substrate with 2, 5, and 10 nm thick Al buffer layers (and SiO(2) buffer). For the films deposited on the 2 nm thick Al buffer layer, we obtained ac-axis-oriented AZO/Al thin film on glass with the XRD full-width at half maximum (FWHM) of 0.31 and root mean square (RMS) surface roughness of about 3.22 nm. The lowest resistivity of 9.46 x 10(-4) Omega cm (sheet resistance similar to 37.87 Omega/square for a thickness similar to 250 nm) and a high transmittance (80%) were obtained by applying a 2 nm thick Al buffer layer. In contrast, the resistivity was slightly increased by applying the SiO(2) buffer layer.en_US
dc.language.isoen_USen_US
dc.subjectOptical propertiesen_US
dc.subjectelectrical propertiesen_US
dc.subjectbuffer layeren_US
dc.subjectAZOen_US
dc.titleGROWTH OF AZO FILMS ON BUFFER LAYERS BY RF MAGNETRON SPUTTERINGen_US
dc.typeArticleen_US
dc.identifier.doi10.1142/S0217984910025097en_US
dc.identifier.journalMODERN PHYSICS LETTERS Ben_US
dc.citation.volume24en_US
dc.citation.issue31en_US
dc.citation.spage3033en_US
dc.citation.epage3040en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000284111300007-
dc.citation.woscount0-
Appears in Collections:Articles