標題: Fabrication and enhanced field emission properties of novel silicon nanostructures
作者: Ravipati, Srikanth
Kuo, Chang-Jung
Shieh, Jiann
Chou, Cheng-Tung
Ko, Fu-Hsiang
材料科學與工程學系
材料科學與工程學系奈米科技碩博班
Department of Materials Science and Engineering
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
公開日期: 1-Dec-2010
摘要: We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/mu m under current density of 0.01 mA/cm(2) for two-tier patterns separated by respective 5 mu m and 2 mu m spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2010.06.005
http://hdl.handle.net/11536/26313
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.06.005
期刊: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 12
起始頁: 1973
結束頁: 1976
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