High performance CPW and microstrip ring resonators on silicon substrates

doi:10.1002/mop.20353

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, CC	en_US
dc.contributor.author	Hung, BF	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	McAlister, SP	en_US
dc.date.accessioned	2014-12-08T15:38:31Z	-
dc.date.available	2014-12-08T15:38:31Z	-
dc.date.issued	2004-09-20	en_US
dc.identifier.issn	0895-2477	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/mop.20353	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26373	-
dc.description.abstract	High performance CPW and novel microstrip ring resonators at similar to30 GHz and 40 GHz have been fabricated on Si substrates, using an optimized proton-implantation process. Very good insertion loss and resonator characteristics, close to those from ideal electromagnetic simulations, were measured. In contrast, the ring resonators on VLSI-standard Si, without implantation, have worse transmission and reflection loss, thus prohibiting applications in RF circuits. (C) 2004 Wiley Periodicals, Inc.	en_US
dc.language.iso	en_US	en_US
dc.subject	CPW	en_US
dc.subject	ring resonators	en_US
dc.subject	VLSI	en_US
dc.subject	RF	en_US
dc.subject	Si	en_US
dc.title	High performance CPW and microstrip ring resonators on silicon substrates	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/mop.20353	en_US
dc.identifier.journal	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS	en_US
dc.citation.volume	42	en_US
dc.citation.issue	6	en_US
dc.citation.spage	511	en_US
dc.citation.epage	514	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000223312900026	-
dc.citation.woscount	1	-
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