完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChan, CHen_US
dc.contributor.authorChen, JKen_US
dc.contributor.authorChang, FCen_US
dc.date.accessioned2014-12-08T15:38:32Z-
dc.date.available2014-12-08T15:38:32Z-
dc.date.issued2004-09-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2004.05.013en_US
dc.identifier.urihttp://hdl.handle.net/11536/26386-
dc.description.abstractIn order to choose appropriate property of Cu chemical-mechanical polishing (CMP) slurry, we used IR thermal camera to distinguish this slurry that belonged to Preston or non-Preston. The adoption of the IR thermal camera is to choose suitable non-Preston Cu CMP slurry in situ and find out optimal changing timing of step endpoint. Additionally supplementing robust CMP machine, appropriate Cu film quality and pre-treatment, we could obtain a total defect number is less than 10(1) order and achieve excellent Cu CMP performance. Such Cu CMP technology resulting in Cu damascene process work and make sure 0.13 mum and beyond 100 nm Cu process to be reliable and practical. (C) 2004 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectCuCMPen_US
dc.subjectin situ slurry characterizeen_US
dc.subjectIR thermal cameraen_US
dc.subjectdefect reductionen_US
dc.titleIn situ characterization of CuCMP slurry and defect reduction using IR thermal cameraen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mee.2004.05.013en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume75en_US
dc.citation.issue3en_US
dc.citation.spage257en_US
dc.citation.epage262en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000224012200003-
dc.citation.woscount3-
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