完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chan, CH | en_US |
dc.contributor.author | Chen, JK | en_US |
dc.contributor.author | Chang, FC | en_US |
dc.date.accessioned | 2014-12-08T15:38:32Z | - |
dc.date.available | 2014-12-08T15:38:32Z | - |
dc.date.issued | 2004-09-01 | en_US |
dc.identifier.issn | 0167-9317 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.mee.2004.05.013 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26386 | - |
dc.description.abstract | In order to choose appropriate property of Cu chemical-mechanical polishing (CMP) slurry, we used IR thermal camera to distinguish this slurry that belonged to Preston or non-Preston. The adoption of the IR thermal camera is to choose suitable non-Preston Cu CMP slurry in situ and find out optimal changing timing of step endpoint. Additionally supplementing robust CMP machine, appropriate Cu film quality and pre-treatment, we could obtain a total defect number is less than 10(1) order and achieve excellent Cu CMP performance. Such Cu CMP technology resulting in Cu damascene process work and make sure 0.13 mum and beyond 100 nm Cu process to be reliable and practical. (C) 2004 Published by Elsevier B.V. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | CuCMP | en_US |
dc.subject | in situ slurry characterize | en_US |
dc.subject | IR thermal camera | en_US |
dc.subject | defect reduction | en_US |
dc.title | In situ characterization of CuCMP slurry and defect reduction using IR thermal camera | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.mee.2004.05.013 | en_US |
dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
dc.citation.volume | 75 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 257 | en_US |
dc.citation.epage | 262 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000224012200003 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |