GROWTH OF PULSED-LASER DEPOSITED YBCO THIN-FILMS ON YSZ AND YSZ/SI SUBSTRATES

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	JUANG, JY	en_US
dc.contributor.author	KAO, RT	en_US
dc.contributor.author	HSIEH, MC	en_US
dc.contributor.author	LI, MH	en_US
dc.contributor.author	CHU, ML	en_US
dc.contributor.author	WU, KH	en_US
dc.contributor.author	UEN, TM	en_US
dc.contributor.author	GOU, YS	en_US
dc.date.accessioned	2014-12-08T15:04:08Z	-
dc.date.available	2014-12-08T15:04:08Z	-
dc.date.issued	1994-02-01	en_US
dc.identifier.issn	0921-4526	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0921-4526(94)90522-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2639	-
dc.description.abstract	The growth mechanism of superconducting YBCO thin films deposited in - situ on both single crystalline YSZ and YSZ-buffered Si substrates as revealed by scanning tunneling microscopy (STM) are found to be very different. The results are attributed to the initial surface condition of the substrates.	en_US
dc.language.iso	en_US	en_US
dc.title	GROWTH OF PULSED-LASER DEPOSITED YBCO THIN-FILMS ON YSZ AND YSZ/SI SUBSTRATES	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/0921-4526(94)90522-3	en_US
dc.identifier.journal	PHYSICA B	en_US
dc.citation.volume	194	en_US
dc.citation.issue		en_US
dc.citation.spage	385	en_US
dc.citation.epage	386	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1994NB78900196	-
顯示於類別：	會議論文