標題: | Atomic layer deposition of epitaxial ZnO on GaN and YSZ |
作者: | Lin, Chih-Wei Ke, Dong-Jie Chao, Yen-Cheng Chang, Li Liang, Mei-Hui Ho, Yen-Teng 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | interfaces;atomic layer epitaxy;oxides;semiconducting II-VI materials |
公開日期: | 1-一月-2007 |
摘要: | ZnO thin films were epitaxially grown by atomic layer deposition on both of GaN/c-sapphire and yttria-stabilized zirconia (YSZ) substrates for comparison. X-ray diffraction, cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements show that epitaxial ZnO films have better structural qualities and optical properties on GaN than on YSZ, whereas atomic force microscopy (AFM) shows that the surface of ZnO films on YSZ is smoother than on GaN. From the ZnO thickness measured by TEM, the growth rate of ZnO on GaN is about one (0 0 0 2) monolayer per cycle, which is roughly four times of that on YSZ. (c) 2006 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jcrysgro.2006.10.139 http://hdl.handle.net/11536/5791 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2006.10.139 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 298 |
Issue: | |
起始頁: | 472 |
結束頁: | 476 |
顯示於類別: | 會議論文 |