標題: | Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate |
作者: | Chao, Yen-Cheng Lin, Chih-Wei Ke, Dong-Jie Wu, Yue-Han Chen, Hou-Guang Chang, Li Ho, Yen-Teng Liang, Mei-Hui 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | interfaces;metalorganic chemical vapor deposition;oxides;semiconducting materials |
公開日期: | 1-一月-2007 |
摘要: | ZnO growth on yttria-stabilized zirconia (YSZ) (I 1 1) single-crystal substrate has been carried out by metalorganic chemical vapor deposition (MOCVD). High-quality epitaxial ZnO has been evidenced by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Cross-sectional TEM from all deposited films reveals that the interface between ZnO and YSZ is atomically flat, and orientation relationship is deduced to be [1 (1) over bar 100](ZnO//)[11 (2) over bar](YSZ,) (2 (1) over bar(1) over bar0)(ZnO)//[001](YSZ) and (0 0 0 2)(ZnO)//(111)(YSZ). It has been found that surface roughness increases with the substrate temperature in the range of 500-700 degrees C. The growth rate also varies with the temperature. (c) 2006 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jcrysgro.2006.10.165 http://hdl.handle.net/11536/5779 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2006.10.165 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 298 |
Issue: | |
起始頁: | 461 |
結束頁: | 463 |
顯示於類別: | 會議論文 |