Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Meng, HF | en_US |
dc.contributor.author | Chen, YS | en_US |
dc.date.accessioned | 2019-04-03T06:37:39Z | - |
dc.date.available | 2019-04-03T06:37:39Z | - |
dc.date.issued | 2004-09-01 | en_US |
dc.identifier.issn | 2469-9950 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.70.115208 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26439 | - |
dc.description.abstract | Electron-hole symmetry in conjugated polymers is found to exist in not only the band structure but also the defect levels caused by structure disorder. The commonly observed higher hole mobility is explained by (1) the compensation of the hole traps by the unintentional background p doping; and (2) the electron traps caused by oxidation. Higher electron mobility in N and O containing conjugated polymers is also explained. Carrier mobility is calculated as a function of doping condition and electric field. Balanced electron-hole transport is shown to be achievable by intentional n doping. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Theory of imbalanced electron-hole transport in conjugated polymers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.70.115208 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 70 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000224209500041 | en_US |
dc.citation.woscount | 15 | en_US |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.