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dc.contributor.authorMeng, HFen_US
dc.contributor.authorChen, YSen_US
dc.date.accessioned2019-04-03T06:37:39Z-
dc.date.available2019-04-03T06:37:39Z-
dc.date.issued2004-09-01en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.70.115208en_US
dc.identifier.urihttp://hdl.handle.net/11536/26439-
dc.description.abstractElectron-hole symmetry in conjugated polymers is found to exist in not only the band structure but also the defect levels caused by structure disorder. The commonly observed higher hole mobility is explained by (1) the compensation of the hole traps by the unintentional background p doping; and (2) the electron traps caused by oxidation. Higher electron mobility in N and O containing conjugated polymers is also explained. Carrier mobility is calculated as a function of doping condition and electric field. Balanced electron-hole transport is shown to be achievable by intentional n doping.en_US
dc.language.isoen_USen_US
dc.titleTheory of imbalanced electron-hole transport in conjugated polymersen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.70.115208en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume70en_US
dc.citation.issue11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000224209500041en_US
dc.citation.woscount15en_US
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