标题: | Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices. |
作者: | Chuang, SH Chou, YH Chiu, HT 應用化學系 Department of Applied Chemistry |
公开日期: | 22-八月-2004 |
URI: | http://hdl.handle.net/11536/26460 |
ISSN: | 0065-7727 |
期刊: | ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY |
Volume: | 228 |
Issue: | |
起始页: | U887 |
结束页: | U887 |
显示于类别: | Conferences Paper |