标题: Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.
作者: Chuang, SH
Chou, YH
Chiu, HT
應用化學系
Department of Applied Chemistry
公开日期: 22-八月-2004
URI: http://hdl.handle.net/11536/26460
ISSN: 0065-7727
期刊: ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
Volume: 228
Issue: 
起始页: U887
结束页: U887
显示于类别:Conferences Paper