標題: High-power diode-pumped actively Q-switched Nd : YVO4 self-Raman laser: influence of dopant concentration
作者: Chen, YF
電子物理學系
Department of Electrophysics
公開日期: 15-八月-2004
摘要: Efficient self-Raman frequency conversion from a diode-pumped actively Q-switched Nd:YVO4 laser at 1064 nm to Stokes emission. at 1176 nm is achieved for the first time to the author's knowledge. With a 0.2-at. % Nd:YVO4 crystal, greater than 1.5 W of power at a wavelength of 1176 nm at a repetition rate of 20 kHz was generated with a diode pump power of 10.8 W, corresponding to 4 conversion of 13.9%. Pulse width and peak power were 18 ns and 4.2 kW, respectively. (C) 2004 Optical Society of America.
URI: http://dx.doi.org/10.1364/OL.29.001915
http://hdl.handle.net/11536/26473
ISSN: 0146-9592
DOI: 10.1364/OL.29.001915
期刊: OPTICS LETTERS
Volume: 29
Issue: 16
起始頁: 1915
結束頁: 1917
顯示於類別:期刊論文