Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, GR | en_US |
dc.contributor.author | Yu, KC | en_US |
dc.contributor.author | Lin, CJ | en_US |
dc.contributor.author | Kuo, HC | en_US |
dc.contributor.author | Ou-Yang, MC | en_US |
dc.date.accessioned | 2014-12-08T15:38:42Z | - |
dc.date.available | 2014-12-08T15:38:42Z | - |
dc.date.issued | 2004-08-09 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1777818 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26482 | - |
dc.description.abstract | The pumping-intensity dependency of nanocrystallite silicon (nc-Si) related microphotoluminescence (mu-PL) from multirecipe Si-implanted quartz is characterized. After annealing at 1100degreesC for 3 h, themu-PL at 724 nm contributed by nc-Si with a diameter of about 4 nm is maximized. By increasing the pumping intensity from 10 kW/cm(2) to 300 kW/cm(2), the mu-PLs of 1 and 3-h-annealed Si-implanted quartz samples are redshifted by <1.2 and 11 nm, respectively. The mu-PL of 3-h-annealed sample further redshifts by 2.5 nm after pumping at 300 kW/cm(2) for h. Such a redshift in PL is attributed to the anomalous quantum Stark effect under strong illumination, which photoionizes the buried nc-Si and initiates an electric field beneath the surface of Si-implanted quartz. The measurement of accumulating charges and voltage drop during illumination primarily elucidate the correlation between redshift in PL and the photoionized nc-Si induced surface electric field. (C) 2004 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1777818 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 85 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 1000 | en_US |
dc.citation.epage | 1002 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000223109500050 | - |
dc.citation.woscount | 6 | - |
Appears in Collections: | Articles |
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