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dc.contributor.authorHuang, KPen_US
dc.contributor.authorLin, Pen_US
dc.contributor.authorShih, HCen_US
dc.date.accessioned2014-12-08T15:38:49Z-
dc.date.available2014-12-08T15:38:49Z-
dc.date.issued2004-07-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1755849en_US
dc.identifier.urihttp://hdl.handle.net/11536/26577-
dc.description.abstractFluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF4) and acetylene (C2H2) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF4/(CF4+C2H2). The samples were annealed at 300 degreesC for 30 min. in a N-2 atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF4 flow ratio (R=0.97) produced more sp(3) linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 mus and an energy gap of similar to2.75 eV were observed in both the as-deposited and after annealing conditions. The short carriers lifetime in the a-C:F film made the photoluminescence peak blueshift. The annealing changed both the structure and composition of the a-C:F film. The type of fluorocarbon bond and electronic structure characterized the mechanical and physical properties of a-C:F film. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleStructures and properties of fluorinated amorphous carbon filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1755849en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume96en_US
dc.citation.issue1en_US
dc.citation.spage354en_US
dc.citation.epage360en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000222093300055-
dc.citation.woscount23-
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