以六氟苯經電漿輔助化學氣相沉積非晶型低介電含氟碳膜

標題:	以六氟苯經電漿輔助化學氣相沉積非晶型低介電含氟碳膜 Amorphous Low Dielectric Fluorinated Carbon Thin Film Grown from C6F6 by PECVD
作者:	萬振宇 Wan Cheng - Yu 裘性天莊琇惠 Chiu Hsin–Tein Chuang Shiow–Huey 應用化學系碩博士班
關鍵字:	六氟苯;電漿輔助化學氣相沉積;含氟碳膜;低介電含氟碳膜;C6F6;PECVD;Fluorinated Carbon Thin Film;Low Dielectric
公開日期:	2001
摘要:	以C6F6為前驅物，以Si(100)矽晶片為基材，利用熱壁式反應器，經電漿輔助化學氣相沉積法來成長薄膜，並探討在不同電漿強度及不同退火溫度下，薄膜內的鍵結環境、物種組成及介電係數有何改變。 Fluorinated amorphous carbon films can be used as low dielectric constant interlayer dielectric materials. The films are deposited by using hexafluorobenzene (C6F6) as the source gas and argon as the carrier gas by PECVD.
URI:	http://140.113.39.130/cdrfb3/record/nctu/#NT900500062 http://hdl.handle.net/11536/69292
顯示於類別：	畢業論文