Diode-pumped passively Q-switched Nd : YAG laser at 1123 nm

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DC 欄位	值	語言
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Lan, YP	en_US
dc.date.accessioned	2014-12-08T15:38:49Z	-
dc.date.available	2014-12-08T15:38:49Z	-
dc.date.issued	2004-07-01	en_US
dc.identifier.issn	0946-2171	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s00340-004-1526-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26580	-
dc.description.abstract	A diode-pumped Nd : YAG laser at 1123 nm is passively Q-switched by using a low doping concentration Cr4+ : YAG crystal as a saturable absorber. When pumped by a 1.5-W laser diode, the laser produces pulses of 50-ns duration with a pulse energy of as much as 15 muJ and a peak power of 300 W at a pulse-repetition rate of 10 kHz.	en_US
dc.language.iso	en_US	en_US
dc.title	Diode-pumped passively Q-switched Nd : YAG laser at 1123 nm	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s00340-004-1526-2	en_US
dc.identifier.journal	APPLIED PHYSICS B-LASERS AND OPTICS	en_US
dc.citation.volume	79	en_US
dc.citation.issue	1	en_US
dc.citation.spage	29	en_US
dc.citation.epage	31	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000221675500005	-
dc.citation.woscount	28	-
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