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dc.contributor.authorChang, YHen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorLu, CYen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorSung, CPen_US
dc.contributor.authorYang, HPen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:38:53Z-
dc.date.available2014-12-08T15:38:53Z-
dc.date.issued2004-07-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/19/7/L02en_US
dc.identifier.urihttp://hdl.handle.net/11536/26628-
dc.description.abstractThis study reports the high-speed performance of 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance. The parasitic capacitance of VCSELs was reduced using additional proton implantation. The small signal modulation bandwidth which was restricted by electric parasitic capacitance expanded from 2.3 GHz to 9 GHz after proton implantation. The reflection coefficient showed that the electric parasitic pole exceeded 20 GHz. An eye diagram of VCSEL with reduced parasitic capacitance operating at 10 Gps with 6 mA bias and 6 dB extinction ratio showed a very clean eye with a jitter of less than 20 ps.en_US
dc.language.isoen_USen_US
dc.titleHigh-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/19/7/L02en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.issue7en_US
dc.citation.spageL74en_US
dc.citation.epageL77en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000222622200002-
dc.citation.woscount8-
Appears in Collections:Articles


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