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dc.contributor.authorYeh, CHen_US
dc.contributor.authorLee, CCen_US
dc.contributor.authorChi, Sen_US
dc.date.accessioned2014-12-08T15:38:53Z-
dc.date.available2014-12-08T15:38:53Z-
dc.date.issued2004-07-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2004.828357en_US
dc.identifier.urihttp://hdl.handle.net/11536/26629-
dc.description.abstractA new S- to L-band erbium-doped fiber amplifier (EDFA) module, which reaches 120-nm gain bandwidth of 1480 to 1600 nm, has been experimentally investigated and demonstrated by using coupled structure. A 32.8-, 34.7-, and 38.1-dB peak gain is obtained at 1504, 1532, and 1568 nm, respectively, when the input signal power is -30 dBm. In addition, this proposed amplifier also provides a broad-band amplified spontaneous emission (ASE) light source of 1480-1606 nm with the output level above -40 dBm.en_US
dc.language.isoen_USen_US
dc.subjectcoupled structureen_US
dc.subjecterbium-doped fiber amplifier (EDFA)en_US
dc.subjectS-banden_US
dc.subjectwavelength-division-multiplexing (WDM) systemsen_US
dc.subjectwide-banden_US
dc.title120-nm bandwidth erbium-doped fiber amplifier in parallel configurationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2004.828357en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue7en_US
dc.citation.spage1637en_US
dc.citation.epage1639en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000222278900011-
dc.citation.woscount19-
Appears in Collections:Articles


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