120-nm bandwidth erbium-doped fiber amplifier in parallel configuration

doi:10.1109/LPT.2004.828357

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, CH	en_US
dc.contributor.author	Lee, CC	en_US
dc.contributor.author	Chi, S	en_US
dc.date.accessioned	2014-12-08T15:38:53Z	-
dc.date.available	2014-12-08T15:38:53Z	-
dc.date.issued	2004-07-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2004.828357	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26629	-
dc.description.abstract	A new S- to L-band erbium-doped fiber amplifier (EDFA) module, which reaches 120-nm gain bandwidth of 1480 to 1600 nm, has been experimentally investigated and demonstrated by using coupled structure. A 32.8-, 34.7-, and 38.1-dB peak gain is obtained at 1504, 1532, and 1568 nm, respectively, when the input signal power is -30 dBm. In addition, this proposed amplifier also provides a broad-band amplified spontaneous emission (ASE) light source of 1480-1606 nm with the output level above -40 dBm.	en_US
dc.language.iso	en_US	en_US
dc.subject	coupled structure	en_US
dc.subject	erbium-doped fiber amplifier (EDFA)	en_US
dc.subject	S-band	en_US
dc.subject	wavelength-division-multiplexing (WDM) systems	en_US
dc.subject	wide-band	en_US
dc.title	120-nm bandwidth erbium-doped fiber amplifier in parallel configuration	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2004.828357	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1637	en_US
dc.citation.epage	1639	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000222278900011	-
dc.citation.woscount	19	-
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