InGaP/InGaAs PHEMT with high IP3 for low noise applications

doi:10.1049/el:20040458

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, YC	en_US
dc.contributor.author	Chang, EY	en_US
dc.contributor.author	Chen, GJ	en_US
dc.contributor.author	Lee, HM	en_US
dc.contributor.author	Huang, GW	en_US
dc.contributor.author	Biswas, D	en_US
dc.contributor.author	Chang, CY	en_US
dc.date.accessioned	2014-12-08T15:38:58Z	-
dc.date.available	2014-12-08T15:38:58Z	-
dc.date.issued	2004-06-10	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20040458	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26677	-
dc.description.abstract	A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IN was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.	en_US
dc.language.iso	en_US	en_US
dc.title	InGaP/InGaAs PHEMT with high IP3 for low noise applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20040458	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	40	en_US
dc.citation.issue	12	en_US
dc.citation.spage	777	en_US
dc.citation.epage	778	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	友訊交大聯合研發中心	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	D Link NCTU Joint Res Ctr	en_US
dc.identifier.wosnumber	WOS:000222386200044	-
dc.citation.woscount	6	-
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