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dc.contributor.authorChang, TCen_US
dc.contributor.authorYan, STen_US
dc.contributor.authorYang, FMen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:38:58Z-
dc.date.available2014-12-08T15:38:58Z-
dc.date.issued2004-06-07en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1761633en_US
dc.identifier.urihttp://hdl.handle.net/11536/26679-
dc.language.isoen_USen_US
dc.titleMemory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)en_US
dc.typeCorrectionen_US
dc.identifier.doi10.1063/1.1761633en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume84en_US
dc.citation.issue23en_US
dc.citation.spage4815en_US
dc.citation.epage4815en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000221656900075-
dc.citation.woscount1-
Appears in Collections:Articles


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