A watt-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology

doi:10.1002/mop.20137

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DC Field	Value	Language
dc.contributor.author	Meng, CC	en_US
dc.contributor.author	Wang, W	en_US
dc.date.accessioned	2014-12-08T15:38:58Z	-
dc.date.available	2014-12-08T15:38:58Z	-
dc.date.issued	2004-06-05	en_US
dc.identifier.issn	0895-2477	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/mop.20137	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26681	-
dc.description.abstract	A one-stage hybrid power amplifier integrated with gap-coupled microstrip lines for impedance matching is demonstrated in this work. The gap-coupled microstrip line amplifier module realized here can provide IS-dB power gain, 33.5-dBm output power, and 42% power-added efficiency (PAE) at 2.3 GHZ. The demonstrated topology is suitable in monolithic 1C technology, especially in the millimeter-wave frequency because the gap-coupled microstrip lines can he easily compacted into small size. 2004 Wiley Periodicals, Inc.	en_US
dc.language.iso	en_US	en_US
dc.subject	MESFET	en_US
dc.subject	power amplifier	en_US
dc.subject	microstrip lines	en_US
dc.title	A watt-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/mop.20137	en_US
dc.identifier.journal	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS	en_US
dc.citation.volume	41	en_US
dc.citation.issue	5	en_US
dc.citation.spage	346	en_US
dc.citation.epage	348	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000221016000005	-
dc.citation.woscount	0	-
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