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dc.contributor.authorYeh, Kuo-Liangen_US
dc.contributor.authorHong, Wei-Lunen_US
dc.contributor.authorGuo, Jyh-Chyumen_US
dc.date.accessioned2014-12-08T15:39:04Z-
dc.date.available2014-12-08T15:39:04Z-
dc.date.issued2010-01-01en_US
dc.identifier.isbn978-1-4244-6057-1en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/26720-
dc.description.abstractThe impact of uni-axial strain from embedded SiGe in recessed S/D (e-SiGe) and Ge implanted S/D (i-SiGe) on effective mobility mu(eff), gate leakage current, short channel effect (SCE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior mu(eff) enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited mu(eff) improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.en_US
dc.language.isoen_USen_US
dc.titleThe Impact of Uniaxial Strain on Low Frequency Noise of Nanoscale PMOSFETs with e-SiGe and i-SiGe Source/Drainen_US
dc.typeArticleen_US
dc.identifier.journal2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT)en_US
dc.citation.volumeen_US
dc.citation.issueen_US
dc.citation.spage316en_US
dc.citation.epage319en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000288196500082-
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