标题: | A novel four-mask-processed poly-Si TFT fabricated using excimer laser crystallization of an edge-thickened alpha-Si active island |
作者: | Chen, TF Yeh, CF Liu, CY Lou, JC 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | anisotropic plasma etching;drain-induced barrier lowering (DIBL);excimer laser-annealed poly-Si;grain boundaries;leakage current;alpha-Si spacer |
公开日期: | 1-六月-2004 |
摘要: | A novel four-mask-processed polycrystalline silicon thin-film transistor (poly-Si TFT) is fabricated using 50-pulse KrF excimer laser to crystallize an edge-thickened amorphous silicon (a-Si) active island without any shrinkage. This method introduces a temperature gradient in the island to enlarge grains from the edge, especially when the channel width is narrow. The grain boundaries across the width of the channel suppress the leakage current and the drain-induced barrier lowering. Moreover, the proposed poly-Si TFT with a channel length of L = 2 mum and a channel width of W = 1.2 mum possesses a high field-effect mobility of 260 cm(2)/Vs and an on/off current ratio of 2.31 x 10(8). |
URI: | http://dx.doi.org/10.1109/LED.2004.829026 http://hdl.handle.net/11536/26748 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.829026 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 25 |
Issue: | 6 |
起始页: | 396 |
结束页: | 398 |
显示于类别: | Articles |
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