完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | Laih, LH | en_US |
dc.contributor.author | Kuo, HC | en_US |
dc.contributor.author | Lin, GR | en_US |
dc.contributor.author | Laih, LW | en_US |
dc.contributor.author | Wang, SC | en_US |
dc.date.accessioned | 2014-12-08T15:39:09Z | - |
dc.date.available | 2014-12-08T15:39:09Z | - |
dc.date.issued | 2004-06-01 | en_US |
dc.identifier.issn | 1041-1135 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2004.827116 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26749 | - |
dc.description.abstract | We report the utilization of an As+-implanted Al-GaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As+-implanted device showed a four-fold increase over the nonimplanted one at the As+ dosage of 1 x 10(16) cm(-3) and the oxidation temperature of 400 degreesC. 50 side-by-side As+-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of DeltaI(th) similar to 0.2 mA and slope-efficiency of DeltaS.E. similar to 3%. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | As+ -implanted | en_US |
dc.subject | oxide-confined | en_US |
dc.subject | vertical-cavity surface-emitting laser (VCSEL) | en_US |
dc.subject | wet-thermal oxidation | en_US |
dc.title | As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LPT.2004.827116 | en_US |
dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
dc.citation.volume | 16 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 1423 | en_US |
dc.citation.epage | 1425 | en_US |
dc.contributor.department | 光电工程学系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000221578300001 | - |
dc.citation.woscount | 1 | - |
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