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dc.contributor.authorKwei, CMen_US
dc.contributor.authorLi, YCen_US
dc.contributor.authorTung, CJen_US
dc.date.accessioned2014-12-08T15:39:11Z-
dc.date.available2014-12-08T15:39:11Z-
dc.date.issued2004-05-07en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/37/9/014en_US
dc.identifier.urihttp://hdl.handle.net/11536/26781-
dc.description.abstractThe energy distribution of electrons quasi -elastically backscattered from solids has been investigated. Monte Carlo, (MC) simulations were performed for the study of the recoil energy shift and the broadening of this distribution for backscattered electrons from Si and Au. In these simulations, electron interaction cross sections were obtained from calculations based on the dielectric response theory for inelastic interactions, including volume and surface excitations, and elastic interactions. The depth-dependent electron inelastic mean free path for volume excitations and the probability of surface excitations were calculated using the dielectric functions derived from optical data. The relativistic partial-wave expansion method was applied to calculate the elastic scattering cross section for a potential of the atom in the solid. The Rutherford-type recoil energy was included in the MC simulations by either considering or neglecting the thermal effect of atomic vibrations. Such an effect was applied using the single scattering model. The intensity of electrons quasi -elastically backscattered from Si and Au was simulated for incident electrons of an energy distribution. The adjustment for the spectrometer energy resolution was allowed. An analytic expression for the intensity of backscattered electrons by a single scattering was derived explicitly. A, comparison of simulated results with experimental data was made and discussed.en_US
dc.language.isoen_USen_US
dc.titleEnergy spectra of electrons quasi-elastically backscattered from solid surfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/37/9/014en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume37en_US
dc.citation.issue9en_US
dc.citation.spage1394en_US
dc.citation.epage1399en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000221709100016-
dc.citation.woscount2-
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