完整後設資料紀錄
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dc.contributor.authorChiou, Jin-Chernen_US
dc.contributor.authorTsai, Shang-Weien_US
dc.contributor.authorChiou, Jin-Chernen_US
dc.contributor.authorHuang, Cheng-Tangen_US
dc.date.accessioned2014-12-08T15:39:15Z-
dc.date.available2014-12-08T15:39:15Z-
dc.date.issued2010-01-01en_US
dc.identifier.isbn978-1-4244-8168-2en_US
dc.identifier.issn1930-0395en_US
dc.identifier.urihttp://dx.doi.org/10.1109/ICSENS.2010.5690256en_US
dc.identifier.urihttp://hdl.handle.net/11536/26809-
dc.description.abstractIn situ SiO(2)-doped SnO(2) thin films have been prepared by liquid phase deposition method. The effect of SiO(2) additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO(2)-doped CuO-Au-SnO(2) gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO(2) gas sensor. However, the doped CuO-Au-SnO(2) gas sensors (Si/Sn = 0.33) can obtained better sensitivity ( S = 67 for 2ppm) and response time (t90% < 3 s).en_US
dc.language.isoen_USen_US
dc.titleEffect of SiO(2) Additive As Inhibitor on Crystalline Structure and H(2)S Sensing Performance of CuO-Au-SnO(2) Thin Film Prepared by Liquid Phase Depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/ICSENS.2010.5690256en_US
dc.identifier.journal2010 IEEE SENSORSen_US
dc.citation.volumeen_US
dc.citation.issueen_US
dc.citation.spage333en_US
dc.citation.epage336en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
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