完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiou, Jin-Chern | en_US |
dc.contributor.author | Tsai, Shang-Wei | en_US |
dc.contributor.author | Chiou, Jin-Chern | en_US |
dc.contributor.author | Huang, Cheng-Tang | en_US |
dc.date.accessioned | 2014-12-08T15:39:15Z | - |
dc.date.available | 2014-12-08T15:39:15Z | - |
dc.date.issued | 2010-01-01 | en_US |
dc.identifier.isbn | 978-1-4244-8168-2 | en_US |
dc.identifier.issn | 1930-0395 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/ICSENS.2010.5690256 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26809 | - |
dc.description.abstract | In situ SiO(2)-doped SnO(2) thin films have been prepared by liquid phase deposition method. The effect of SiO(2) additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO(2)-doped CuO-Au-SnO(2) gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO(2) gas sensor. However, the doped CuO-Au-SnO(2) gas sensors (Si/Sn = 0.33) can obtained better sensitivity ( S = 67 for 2ppm) and response time (t90% < 3 s). | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of SiO(2) Additive As Inhibitor on Crystalline Structure and H(2)S Sensing Performance of CuO-Au-SnO(2) Thin Film Prepared by Liquid Phase Deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/ICSENS.2010.5690256 | en_US |
dc.identifier.journal | 2010 IEEE SENSORS | en_US |
dc.citation.volume | en_US | |
dc.citation.issue | en_US | |
dc.citation.spage | 333 | en_US |
dc.citation.epage | 336 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
顯示於類別: | 會議論文 |