標題: Improved crystalline structure and H(2)S sensing performance of CuO-Au-SnO(2) thin film using SiO(2) additive concentration
作者: Tsai, Shang-Wei
Chiou, Jin-Chern
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 1-三月-2011
摘要: In situ SiO(2)-doped SnO(2) thin films were successfully prepared by liquid phase deposition. The influence of SiO(2) additive as an inhibitor on the surface morphology and the grain size for the thin film has been investigated. These results show that the morphology of SnO(2) film changes significantly by increasing the concentration of H(2)SiF(6) solution which decreases the grain size of SnO(2). The stoichiometric analysis of Si content in the SnO(2) film prepared from various Si/Sn molar ratios has also been estimated. For the sensing performance of H(2)S gas, the SiO(2)-doped Cu-Au-SnO(2) sensor presents better sensitivity to H(2)S gas compared with Cu-Au-SnO(2) sensor due to the fact that the distribution of SiO(2) particles in grain boundaries of nano-crystallines SnO(2) inhibited the grain growth (<6 nm) and formed a porous film. By increasing the Si/Sn molar ratio, the SiO(2)-doped Cu-Au-SnO(2) gas sensors (Si/Sn=0.5) exhibit a good sensitivity (S=67), a short response time (t(90%)<3 s) and a good gas concentration characteristic (alpha=0.6074). Consequently, the improvement of the nano-crystalline structures and high sensitivity for sensing films can be achieved by introducing SiO(2) additive into the SnO(2) film prepared by LPD method. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.snb.2010.12.004
http://hdl.handle.net/11536/9200
ISSN: 0925-4005
DOI: 10.1016/j.snb.2010.12.004
期刊: SENSORS AND ACTUATORS B-CHEMICAL
Volume: 152
Issue: 2
起始頁: 176
結束頁: 182
顯示於類別:期刊論文