Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, TC | en_US |
dc.contributor.author | Yan, ST | en_US |
dc.contributor.author | Hsu, CH | en_US |
dc.contributor.author | Tang, MT | en_US |
dc.contributor.author | Lee, JF | en_US |
dc.contributor.author | Tai, YH | en_US |
dc.contributor.author | Liu, PT | en_US |
dc.contributor.author | Sze, SM | en_US |
dc.date.accessioned | 2014-12-08T15:39:21Z | - |
dc.date.available | 2014-12-08T15:39:21Z | - |
dc.date.issued | 2004-04-05 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1697627 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26879 | - |
dc.description.abstract | In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3x10(11) cm(-2), respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to similar to0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots. (C) 2004 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A distributed charge storage with GeO2 nanodots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1697627 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 84 | en_US |
dc.citation.issue | 14 | en_US |
dc.citation.spage | 2581 | en_US |
dc.citation.epage | 2583 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000220586800037 | - |
dc.citation.woscount | 36 | - |
Appears in Collections: | Articles |
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