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dc.contributor.authorChang, TCen_US
dc.contributor.authorYan, STen_US
dc.contributor.authorHsu, CHen_US
dc.contributor.authorTang, MTen_US
dc.contributor.authorLee, JFen_US
dc.contributor.authorTai, YHen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:39:21Z-
dc.date.available2014-12-08T15:39:21Z-
dc.date.issued2004-04-05en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1697627en_US
dc.identifier.urihttp://hdl.handle.net/11536/26879-
dc.description.abstractIn this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3x10(11) cm(-2), respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to similar to0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleA distributed charge storage with GeO2 nanodotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1697627en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume84en_US
dc.citation.issue14en_US
dc.citation.spage2581en_US
dc.citation.epage2583en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000220586800037-
dc.citation.woscount36-
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