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dc.contributor.authorLi, SYen_US
dc.contributor.authorLin, Pen_US
dc.contributor.authorLee, CYen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:39:21Z-
dc.date.available2014-12-08T15:39:21Z-
dc.date.issued2004-04-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1655685en_US
dc.identifier.urihttp://hdl.handle.net/11536/26883-
dc.description.abstractThe ZnO nanowires synthesized by vapor-liquid-solid growth mechanism with Cu and Au as the catalyst were investigated. The principal differences in morphology between Cu and Au catalyzed ZnO nanowires are observed and lead to significant differences in their field emission and photofluorescent characteristics. The Cu catalyzed ZnO nanowires with a high-quality wurtzite structure were grown vertically on p-type Si(100) substrate along [0002] direction. A strong ultraviolet emission at 381 nm is observed. These ZnO nanowires show excellent field emission properties with turn-on field of 0.83 V/mum and corresponding current density of 25 muA/cm(2). The emitted current density of the ZnO nanowires is 1.52 mA/cm(2) at a bias field of 8.5 V/mum. The large field emission area factor, beta arising from the morphology of the nanowire field emitter, is partly responsible for the good emission characteristics. The ZnO nanowires with high emission current density and low turn-on field are expected to be used in field emission flat panel display. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleField emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid processen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1655685en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume95en_US
dc.citation.issue7en_US
dc.citation.spage3711en_US
dc.citation.epage3716en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000220342700070-
dc.citation.woscount143-
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