Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, SY | en_US |
dc.contributor.author | Lin, P | en_US |
dc.contributor.author | Lee, CY | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.date.accessioned | 2014-12-08T15:39:21Z | - |
dc.date.available | 2014-12-08T15:39:21Z | - |
dc.date.issued | 2004-04-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1655685 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26883 | - |
dc.description.abstract | The ZnO nanowires synthesized by vapor-liquid-solid growth mechanism with Cu and Au as the catalyst were investigated. The principal differences in morphology between Cu and Au catalyzed ZnO nanowires are observed and lead to significant differences in their field emission and photofluorescent characteristics. The Cu catalyzed ZnO nanowires with a high-quality wurtzite structure were grown vertically on p-type Si(100) substrate along [0002] direction. A strong ultraviolet emission at 381 nm is observed. These ZnO nanowires show excellent field emission properties with turn-on field of 0.83 V/mum and corresponding current density of 25 muA/cm(2). The emitted current density of the ZnO nanowires is 1.52 mA/cm(2) at a bias field of 8.5 V/mum. The large field emission area factor, beta arising from the morphology of the nanowire field emitter, is partly responsible for the good emission characteristics. The ZnO nanowires with high emission current density and low turn-on field are expected to be used in field emission flat panel display. (C) 2004 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1655685 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 95 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 3711 | en_US |
dc.citation.epage | 3716 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000220342700070 | - |
dc.citation.woscount | 143 | - |
Appears in Collections: | Articles |
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