Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kao, CC | en_US |
dc.contributor.author | Huang, HW | en_US |
dc.contributor.author | Tsai, JY | en_US |
dc.contributor.author | Yu, CC | en_US |
dc.contributor.author | Lin, CF | en_US |
dc.contributor.author | Kuo, HC | en_US |
dc.contributor.author | Wang, SC | en_US |
dc.date.accessioned | 2014-12-08T15:39:26Z | - |
dc.date.available | 2014-12-08T15:39:26Z | - |
dc.date.issued | 2004-03-25 | en_US |
dc.identifier.issn | 0921-5107 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.mseb.2003.11.023 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26934 | - |
dc.description.abstract | Dry etching of undoped, n-GaN, p-GaN and InGaN laser structure was investigated by inductively coupled plasmas reactive ion etching (ICP-RIE) using Ni mask. As Cl-2/Ar gas flow rates were fixed at 10/25 sccm, the etched surface roughness has the lowest value of 0.2 nm at constant ICP/bias power = 300/100 W and 5 mTorr chamber pressure for undoped GaN. The highest etching rate of 12,000 Angstrom/min for n-GaN was achieved at 30 mTorr, 300 W ICP, 100 W bias power using low Cl-2 flow rate (Cl-2/Ar = 10/25 sccm) gas mixtures. The surface roughness was dependent of bias power and chamber pressure, and shows a low root mean square (rms) roughness value of about I nm at 50 W of bias power for n-GaN and p-GaN. For etching of InGaN laser structure using high O-2 flow rate (Cl-2/Ar = 50/20 sccm) and low chamber pressure 5 mTorr, a smooth mirror-like facet of InGaN laser diode structure was obtained. Using these etching parameters, mirror-like facets can be obtained which can be used for the fabrication of nitride-based laser diodes. Moreover, at the fixed Cl-2/Ar flow rate of 10/25 sccm, ICP/bias power of 200/100 W and chamber pressure of 30 mTorr, the InGaN-based materials nanorods were fabricated with a density of about 10(8) cm(-2) and dimension of 50-100 nm. (C) 2004 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GaN | en_US |
dc.subject | inductively coupled plasma (ICP) | en_US |
dc.subject | mirror-like facet | en_US |
dc.subject | laser diode | en_US |
dc.subject | nanorods | en_US |
dc.title | Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.mseb.2003.11.023 | en_US |
dc.identifier.journal | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | en_US |
dc.citation.volume | 107 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 283 | en_US |
dc.citation.epage | 288 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000220420100010 | - |
dc.citation.woscount | 16 | - |
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