標題: | Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash Memory |
作者: | Chou, Y. L. Chiu, J. P. Ma, H. C. Wang, Tahui Chao, Y. P. Chen, K. C. Lu, Chih-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2010 |
摘要: | A novel random telegraph signal (RTS) method is proposed to study the lateral spread of injected charges in program/erase of a NOR-type SONOS flash memory. The concept is to use RTS to extract an interface trap position and to detect a local potential variation near the trap due to injection of program/erase charges. By using this method, we find that CHISEL program has a broader charge distribution than CHE program. A mismatch of CHE program electrons and band-to-band erase holes is observed directly from this method. |
URI: | http://hdl.handle.net/11536/26942 http://dx.doi.org/10.1109/IRPS.2010.5488696 |
ISBN: | 978-1-4244-5431-0 |
DOI: | 10.1109/IRPS.2010.5488696 |
期刊: | 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM |
起始頁: | 960 |
結束頁: | 963 |
顯示於類別: | 會議論文 |