標題: Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash Memory
作者: Chou, Y. L.
Chiu, J. P.
Ma, H. C.
Wang, Tahui
Chao, Y. P.
Chen, K. C.
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: A novel random telegraph signal (RTS) method is proposed to study the lateral spread of injected charges in program/erase of a NOR-type SONOS flash memory. The concept is to use RTS to extract an interface trap position and to detect a local potential variation near the trap due to injection of program/erase charges. By using this method, we find that CHISEL program has a broader charge distribution than CHE program. A mismatch of CHE program electrons and band-to-band erase holes is observed directly from this method.
URI: http://hdl.handle.net/11536/26942
http://dx.doi.org/10.1109/IRPS.2010.5488696
ISBN: 978-1-4244-5431-0
DOI: 10.1109/IRPS.2010.5488696
期刊: 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
起始頁: 960
結束頁: 963
顯示於類別:會議論文


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