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dc.contributor.authorWang, JCen_US
dc.contributor.authorShie, DCen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorLee, CLen_US
dc.date.accessioned2014-12-08T15:39:29Z-
dc.date.available2014-12-08T15:39:29Z-
dc.date.issued2004-03-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1644616en_US
dc.identifier.urihttp://hdl.handle.net/11536/26960-
dc.description.abstractThe capacitance-voltage (C-V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors with different sweep voltage were investigated. It was found that, for the p-type substrate MOS capacitor, the C-V hysterisis has a turnaround characteristic as the applied voltage exceeds -3.0 V. The phenomenon is explained by electron trappings at the low electric field and hole trappings, which resulted from the impact ionization, at the high electric field in the dielectrics. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleTurnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1644616en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume84en_US
dc.citation.issue9en_US
dc.citation.spage1531en_US
dc.citation.epage1533en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000189264100033-
dc.citation.woscount6-
Appears in Collections:Articles


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