Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics

doi:10.1063/1.1644616

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DC 欄位	值	語言
dc.contributor.author	Wang, JC	en_US
dc.contributor.author	Shie, DC	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Lee, CL	en_US
dc.date.accessioned	2014-12-08T15:39:29Z	-
dc.date.available	2014-12-08T15:39:29Z	-
dc.date.issued	2004-03-01	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1644616	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26960	-
dc.description.abstract	The capacitance-voltage (C-V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors with different sweep voltage were investigated. It was found that, for the p-type substrate MOS capacitor, the C-V hysterisis has a turnaround characteristic as the applied voltage exceeds -3.0 V. The phenomenon is explained by electron trappings at the low electric field and hole trappings, which resulted from the impact ionization, at the high electric field in the dielectrics. (C) 2004 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1644616	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	84	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1531	en_US
dc.citation.epage	1533	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000189264100033	-
dc.citation.woscount	6	-
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