Characteristics of MIS Solar Cells Using Sputtering SiO(2) Insulating Layers

Abstract

In this study, the characteristics of both p-type and n-ype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO(2) insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO(2) insulating layer and a hydrogen (H(2)) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO(2) insulating layer can be greatly enhanced by depositing a SiN(x) passivation layer on top. It suggests that a sputtering SiO(2) insulating layer is a good alternative insulating layer for MIS solar cells.