疊合式金氧半太陽能電池之研究

Abstract

在本篇論文當中，首先我們先分析n型與p型的金氧半太陽能電池。由於我們是使用磁控濺鍍機來成長超薄穿隧氧化層，大量的缺陷會在濺鍍過程中被製造出來。於是我們加入一道氫氣退火的製程，以形成矽氫鍵結的方式來修補矽的懸空鍵。我們同時也調控氧化層厚度、工作壓力、以及用於載子收集之金屬層的厚度來達到高開路電壓輸出。

隨後，為了實現疊合式金氧半太陽能電池，我們使用晶圓直接接合的方式來達到穿隧二極體並對其進行分析。最後再將n型與p型金氧半太陽能電池整合到穿隧二極體上，完成疊合式金氧半太陽能電池並量測其光伏特性。量測結果顯示最好的開路電壓達到593mV，大於單一接面的金氧半太陽能電池，證明我們所提出來的結構之可行性以及其用在電解水的潛力

In this thesis, the n-type and p-type MIS solar cells are investigated first. Since we use sputter to deposit tunnel oxide as insulating layer, a lot of defects are produced during sputtering. Therefore, we introduce an annealing process in hydrogen atmosphere to passivate Si dangling bonds by the formation of Si-H bonds. We also fine tune the oxide thickness, working pressure, and collecting thin metal thickness to achieve high Voc.

Later, to realize MIS stacked solar cells, we fabricate and investigate the tunneling junction by directly wafer bonding. Finally, we integrate n-type and p-type MIS junctions on bonded sample and measure the photovoltaic properties of MIS stacked solar cells. Consequently, the best Voc we obtain is 593mV, larger than single junction cells, demonstrating that the structure is practical and have its potential to achieve water splitting.