完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, TC | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.date.accessioned | 2014-12-08T15:39:38Z | - |
dc.date.available | 2014-12-08T15:39:38Z | - |
dc.date.issued | 2004-02-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27058 | - |
dc.description.abstract | The reflection high energy electron diffraction (RHEED) intensity is reported following a quadratic power law dependence on annealing time for interrupted laser ablation-grown strontium titanate films. The activation energy of 1.0eV can further be obtained from the diffusion Arrhenius plot by assuming a direct proportionality between the RHEED intensity and the diffusion length. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | RHEED | en_US |
dc.subject | activation energy | en_US |
dc.subject | reflection high energy electron diffraction | en_US |
dc.subject | diffusion | en_US |
dc.subject | activation energy | en_US |
dc.subject | kinetics | en_US |
dc.title | Thermally activated diffusion observed by in situ reflection high energy electron diffraction intensity monitoring on interrupted SrTiO3 homoepitaxial growth | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 43 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 771 | en_US |
dc.citation.epage | 772 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000220401000071 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |