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dc.contributor.authorWang, TCen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:39:38Z-
dc.date.available2014-12-08T15:39:38Z-
dc.date.issued2004-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/27058-
dc.description.abstractThe reflection high energy electron diffraction (RHEED) intensity is reported following a quadratic power law dependence on annealing time for interrupted laser ablation-grown strontium titanate films. The activation energy of 1.0eV can further be obtained from the diffusion Arrhenius plot by assuming a direct proportionality between the RHEED intensity and the diffusion length.en_US
dc.language.isoen_USen_US
dc.subjectRHEEDen_US
dc.subjectactivation energyen_US
dc.subjectreflection high energy electron diffractionen_US
dc.subjectdiffusionen_US
dc.subjectactivation energyen_US
dc.subjectkineticsen_US
dc.titleThermally activated diffusion observed by in situ reflection high energy electron diffraction intensity monitoring on interrupted SrTiO3 homoepitaxial growthen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue2en_US
dc.citation.spage771en_US
dc.citation.epage772en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000220401000071-
dc.citation.woscount2-
Appears in Collections:Articles


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