Thermally activated diffusion observed by in situ reflection high energy electron diffraction intensity monitoring on interrupted SrTiO3 homoepitaxial growth

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, TC	en_US
dc.contributor.author	Juang, JY	en_US
dc.contributor.author	Wu, KH	en_US
dc.contributor.author	Uen, TM	en_US
dc.contributor.author	Gou, YS	en_US
dc.date.accessioned	2014-12-08T15:39:38Z	-
dc.date.available	2014-12-08T15:39:38Z	-
dc.date.issued	2004-02-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27058	-
dc.description.abstract	The reflection high energy electron diffraction (RHEED) intensity is reported following a quadratic power law dependence on annealing time for interrupted laser ablation-grown strontium titanate films. The activation energy of 1.0eV can further be obtained from the diffusion Arrhenius plot by assuming a direct proportionality between the RHEED intensity and the diffusion length.	en_US
dc.language.iso	en_US	en_US
dc.subject	RHEED	en_US
dc.subject	activation energy	en_US
dc.subject	reflection high energy electron diffraction	en_US
dc.subject	diffusion	en_US
dc.subject	activation energy	en_US
dc.subject	kinetics	en_US
dc.title	Thermally activated diffusion observed by in situ reflection high energy electron diffraction intensity monitoring on interrupted SrTiO3 homoepitaxial growth	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	43	en_US
dc.citation.issue	2	en_US
dc.citation.spage	771	en_US
dc.citation.epage	772	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000220401000071	-
dc.citation.woscount	2	-
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