NOVEL CHARACTERISTICS OF THE POLYSILICON HIGH-LOW-EMITTER (PHL-EMITTER) BIPOLAR-TRANSISTOR HIGH-CURRENT GAIN AND ZERO ACTIVATION-ENERGY

Abstract

The polysilicon high low-emitter (PHL-emitter) bipolar transistor with high current gain and zero activation energy at a certain collector current has been fabricated and characterized. It is shown that the higher current gain is mainly due to the narrower base width using the n- implant and the selectively implanted collector. However, the zero activation energy of the current gain at a certain collector current is caused by the two-dimensional flow of the base current. These features are very useful for analog circuit applications where the zero temperature-dependent current gain is required.