Title: | NOVEL CHARACTERISTICS OF THE POLYSILICON HIGH-LOW-EMITTER (PHL-EMITTER) BIPOLAR-TRANSISTOR HIGH-CURRENT GAIN AND ZERO ACTIVATION-ENERGY |
Authors: | CHANG, KZ WU, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 1-Jan-1994 |
Abstract: | The polysilicon high low-emitter (PHL-emitter) bipolar transistor with high current gain and zero activation energy at a certain collector current has been fabricated and characterized. It is shown that the higher current gain is mainly due to the narrower base width using the n- implant and the selectively implanted collector. However, the zero activation energy of the current gain at a certain collector current is caused by the two-dimensional flow of the base current. These features are very useful for analog circuit applications where the zero temperature-dependent current gain is required. |
URI: | http://dx.doi.org/10.1016/0038-1101(94)90110-4 http://hdl.handle.net/11536/2710 |
ISSN: | 0038-1101 |
DOI: | 10.1016/0038-1101(94)90110-4 |
Journal: | SOLID-STATE ELECTRONICS |
Volume: | 37 |
Issue: | 1 |
Begin Page: | 93 |
End Page: | 96 |
Appears in Collections: | Articles |