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dc.contributor.authorLee, DYen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorChiang, WJen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorWanga, Ten_US
dc.date.accessioned2014-12-08T15:39:42Z-
dc.date.available2014-12-08T15:39:42Z-
dc.date.issued2004-02-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1639168en_US
dc.identifier.urihttp://hdl.handle.net/11536/27110-
dc.description.abstractThe effects of poly-Si gate doping type and species as well as thermal treatments on negative-bias-temperature instability (NBTI) of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were investigated. We found that devices with n(+)-poly-Si gate depict a smaller threshold voltage shift after bias-temperature stressing, compared to their p(+)-poly-Si-gated counterparts. By carefully controlling the thermal budget to suppress boron penetration, NBTI can be reduced by fluorine incorporation in p(+)-poly-Si-gated devices. Finally, NBTI is found to be aggravated in devices subjected to H-2 postmetal-annealing, highlighting the important role of hydrogen bonds. (C) 2004 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleEffects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1639168en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume151en_US
dc.citation.issue2en_US
dc.citation.spageG144en_US
dc.citation.epageG148en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000188182100061-
dc.citation.woscount0-
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