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dc.contributor.authorLan, JKen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorLiu, CPen_US
dc.contributor.authorLee, WHen_US
dc.contributor.authorAy, Cen_US
dc.contributor.authorCheng, YLen_US
dc.contributor.authorChang, SCen_US
dc.date.accessioned2014-12-08T15:39:43Z-
dc.date.available2014-12-08T15:39:43Z-
dc.date.issued2004-01-30en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2003.09.039en_US
dc.identifier.urihttp://hdl.handle.net/11536/27124-
dc.description.abstractThis paper investigates. the monitor and elimination methods for the circular defects in high-density-plasma shallow trench isolation (HDP-STI) deposition process. The optical measurement method can monitor the circular defects in early stage. When the thickness of silane-burst film exceeds 7.8 nm, the fit-error can alert the circular defects. The oxynitride/oxide composite liner can eliminate the circular defects. Besides this, the oxynitride/oxide composite liner can also improve the breakdown strength of the STI oxide. The breakdown strength of the STI oxide increases, respectively, 375 and 30% in the wafer center and edge. The uniformity of the STI breakdown strength was reduced from greater than 200% to less than 10% using the composite liner. The traditional N2O plasma treatment for stabilizing the oxynitride film is harmful in the HDP-STI process. The N2O plasma treatment shows the worst circular defect performance. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectshallow trench isolationen_US
dc.subjectcomposite lineren_US
dc.subjectcircular defectsen_US
dc.titleMonitor and eliminate the circular defects in HDP-STI deposition through oxynitride/oxide composite lineren_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2003.09.039en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume447en_US
dc.citation.issueen_US
dc.citation.spage645en_US
dc.citation.epage650en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000188995700111-
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