Preferentially oriented ferroelectric Pb(Zr0.53Ti0.47)O(3)thin films on (110)BaRuO3/Ru/SiO2/Si substrates

Abstract

Ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were deposited on BaRuO3 (BRO)/Ru/SiO2/Si substrates by a sol-gel method. The (110)-oriented BaRuO3 bottom electrode films were deposited by rf sputtering at various temperatures. Highly (110) preferentially oriented PZT films were formed after annealing at over 450degreesC. The leakage current, dielectric constant, loss tangent, and polarization vs. electric field properties were strongly dependent on the annealing temperature of the PZT films and the deposition temperature of BRO electrodes. The dielectric constant and polarization decreased when the annealing temperature of the PZT film was over 700degreesC, which may be due to the interdiffusion between PZT and BRO. (C) 2003 The Electrochemical Society.