標題: Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride
作者: Chang, TC
Yan, ST
Liu, PT
Chen, CW
Wu, YC
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP)CVD Si3N4. Also, low-temperature (2000degreesC) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780degreesC) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/27148
http://dx.doi.org/10.1149/1.1695537
ISSN: 1099-0062
DOI: 10.1149/1.1695537
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 7
Issue: 6
起始頁: G113
結束頁: G115
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